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APT10050B2VFR APT10050LVFR
1000V 21A 0.500W
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
B2VR
T-MAXTM
TO-264
LVR
* Identical Specifications: T-MAXTM or TO-264 Package * Faster Switching * Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
D G S
* 100% Avalanche Tested
All Ratings: TC = 25C unless otherwise specified.
APT10050 UNIT Volts Amps
1000 21 84 30 40 520 4.16 -55 to 150 300 21 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 21 0.500 250 1000 100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5591 Rev C 10-2000
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10050B2VFR/LVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6W MIN TYP MAX UNIT pF
6600 595 290 335 29 165 16 13 59 8
7900 830 430 500 45 250 32 26 90 16
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Timexxdx Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns
21 84 1.3 5
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -ID [Cont.])
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s)
300 600 1.7 4.8 12 19
C
Amps
THERMAL CHARACTERISTICS
Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.24 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 11.34mH, R = 25W, Peak I = 21A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0W, dt
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05 0.02 0.005 0.01 SINGLE PULSE
PDM
0.01
Note:
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-5591 Rev C 10-2000
Z 0.001 10-5
qJC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT10050B2VFR/LVFR
50 ID, DRAIN CURRENT (AMPERES) VGS=5.5V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 50
40
40 VGS=5.5V, 10V & 15V 30 5V
30
5V
20 4.5V 10 4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0
20 4.5V 10 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
50 ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.3
V
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
40
1.2
30
1.1
20 TJ = -55C 10 TJ = +125C TJ = +25C 0
VGS=10V
VGS=20V
1.0
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 25 ID, DRAIN CURRENT (AMPERES)
0.9
0
10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25
I = 0.5 I [Cont.]
D D
1.15 1.10 1.05 1.00 0.95 0.90
20
15
10
5
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
V
0
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.85
-50
GS
= 10V
2.0
1.1 1.0
1.5
0.9 0.8 0.7 050-5591 Rev C 10-2000
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT10050B2VFR/LVFR
100 ID, DRAIN CURRENT (AMPERES) 50
OPERATION HERE LIMITED BY RDS (ON)
10S 100S
30,000
10,000 C, CAPACITANCE (pF) 10 5 10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC 1mS 5,000
Ciss
Coss 1,000 500 Crss
.1
1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 100 50 TJ =+150C TJ =+25C
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
16 VDS=100V 12 VDS=200V
8
VDS=500V
10 5
4
100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079)
19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
050-5591 Rev C 10-2000
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058

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